to ? 92s 1. emitter 2. collector 3. base to-92s plastic-encapsulate transistors KTA1297 transistor (pnp) features z general purpose switching application maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = -0.1ma,i e =0 -20 v collector-emitter breakdown voltage v (br)ceo i c =-1ma,i b =0 -20 v emitter-base breakdown voltage v (br)ebo i e =-0.1ma,i c =0 -6 v collector cut-off current i cbo v cb =-20v,i e =0 -0.1 a emitter cut-off current i ebo v eb =-6v,i c =0 -0.1 a h fe(1) v ce =-2v, i c =-0.1a 120 400 dc current gain h fe(2) v ce =-2v, i c =-2a 40 collector-emitter saturation voltage v ce(sat) i c =-2a,i b =-0.1a -0.5 v base-emitter voltage v be v ce =-2v, i c =-0.1a -0.85 v collector output capacitance c ob v cb =-10v,i e =0, f=1mhz 40 pf transition frequency f t v ce =-2v,i c =-0.5a 120 mhz classification of h fe(1) rank y gr range 120-240 200-400 symbol parameter value unit v cbo collector-base voltage -20 v v ceo collector-emitter voltage -20 v v ebo emitter-base voltage -6 v i c collector current -2 a p c collector power dissipation 400 mw r ja thermal resistance from junction to ambient 312 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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